| 摘要 |
The invention relates to the production of magnetic field sensor devices whose operation is based on the phenomenon of ballistic magnetoresistance (BMR). The inventive spintronic magnetoresistive device differs from other existing devices in that the nanocontacts are formed by the inclusion of one or more micro and/or nanometric ferromagnetic particles located between two electrodes which serve as contacts with suitable metallic scales and/or electrochemical deposits. The configuration of the particle or particles forming the contact area (as well as the materials used in the electrodes and the particles) can vary. The aforementioned magnetic sensors display high magnetoresistance (MR) values and, more importantly, said devices remain stable for long periods of time.
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