| 发明名称 |
SOLID STATE PHOTOMULTIPLIER |
| 摘要 |
Embodiments of a solid state photomultiplier are provided herein. In some embodiments, a solid state photomultiplier may include an epitaxial layer, a high voltage region formed in the epitaxial layer, a low voltage region formed in the epitaxial layer, and an intermediate region disposed between the high voltage region and low voltage region, wherein the high voltage region is electrically coupled to the low voltage region via the intermediate region, and wherein at least a portion of the epitaxial layer is disposed between the high voltage region and intermediate region and between the low voltage region and the intermediate region. |
| 申请公布号 |
US2016358957(A1) |
申请公布日期 |
2016.12.08 |
| 申请号 |
US201615077006 |
申请日期 |
2016.03.22 |
| 申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
Guo Jianjun;Dolinsky Sergei Ivanovich;Short Jonathan David |
| 分类号 |
H01L27/146;H01L31/0352 |
主分类号 |
H01L27/146 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A solid state photomultiplier, comprising:
an epitaxial layer; a high voltage region formed in the epitaxial layer; a low voltage region formed in the epitaxial layer; and an intermediate region disposed between the high voltage region and low voltage region, wherein the high voltage region is electrically coupled to the low voltage region via the intermediate region, and wherein at least a portion of the epitaxial layer is disposed between the high voltage region and intermediate region and between the low voltage region and the intermediate region. |
| 地址 |
Schenectady NY US |
