An upper electrode (34) and a lower electrode (16) are arranged to oppose to each other in a treatment vessel (10) which can be evacuated. The upper electrode (34) is connected to a first high-frequency power source (48) for supplying high-frequency power for plasma formation. The lower electrode (16) is connected to a second high-frequency power source (90) for applying high-frequency power for ion take-in bias. A controller (95) is arranged in the second high-frequency power source (90). The controller (95) controls the second high-frequency power source (90) in a power modulation mode where power modulation is performed at a predetermined cycle between a first power at which polymer is deposited on a predetermined film of a wafer W and a second power at which etching of a predetermined film of the wafer W is performed.
申请公布号
WO2008044633(A1)
申请公布日期
2008.04.17
申请号
WO2007JP69563
申请日期
2007.10.05
申请人
TOKYO ELECTRON LIMITED;KOSHIISHI, AKIRA;KOBAYASHI, NORIYUKI;YONEDA, SHIGERU;HANAWA, KENICHI;TAHARA, SHIGERU;SUGIMOTO, MASARU