发明名称 |
SUBSTRATE PROCESSING APPARATUS, TEMPERATURE CONTROL PLATE, AND SUBSTRATE PROCESSING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a substrate processing apparatus which prevents deterioration of throughput of substrate processing and enables partial substrate temperature control.SOLUTION: A COR processing device 14 serving as a substrate processing apparatus includes: a chamber 36 having a sealed structure; heaters 59 embedded in a ceiling part 41a and a side wall part 41b of a lid part 41 forming the chamber 36; and a stage 37 which is disposed in the chamber 36 and configured to place a wafer W thereon. A pattern disc 60 is disposed between the wafer W and the stage 37. Hard alumite treatment is partially performed in the pattern disc 60. The pattern disc 60 has a first thermal emissivity change region 60a and a thermal emissivity non-change region which have different thermal emissivity.SELECTED DRAWING: Figure 4 |
申请公布号 |
JP2016167484(A) |
申请公布日期 |
2016.09.15 |
申请号 |
JP20150045717 |
申请日期 |
2015.03.09 |
申请人 |
TOKYO ELECTRON LTD |
发明人 |
KAWAGUCHI KOJI;HINATA TOSHIKI |
分类号 |
H01L21/3065;H01L21/677;H01L21/683 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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