发明名称 SUBSTRATE PROCESSING APPARATUS, TEMPERATURE CONTROL PLATE, AND SUBSTRATE PROCESSING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a substrate processing apparatus which prevents deterioration of throughput of substrate processing and enables partial substrate temperature control.SOLUTION: A COR processing device 14 serving as a substrate processing apparatus includes: a chamber 36 having a sealed structure; heaters 59 embedded in a ceiling part 41a and a side wall part 41b of a lid part 41 forming the chamber 36; and a stage 37 which is disposed in the chamber 36 and configured to place a wafer W thereon. A pattern disc 60 is disposed between the wafer W and the stage 37. Hard alumite treatment is partially performed in the pattern disc 60. The pattern disc 60 has a first thermal emissivity change region 60a and a thermal emissivity non-change region which have different thermal emissivity.SELECTED DRAWING: Figure 4
申请公布号 JP2016167484(A) 申请公布日期 2016.09.15
申请号 JP20150045717 申请日期 2015.03.09
申请人 TOKYO ELECTRON LTD 发明人 KAWAGUCHI KOJI;HINATA TOSHIKI
分类号 H01L21/3065;H01L21/677;H01L21/683 主分类号 H01L21/3065
代理机构 代理人
主权项
地址