| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light emitting diode which is easily manufactured because of a simple structure and can stably obtain a large luminous efficiency for a long period of time. <P>SOLUTION: At a primary main front surface side of a nitride semiconductor substrate 1, there are provided an n-type nitride semiconductor layer 2, a p-type nitride semiconductor layer 6 which is located farther than the n-type nitride semiconductor layer 2 from the nitride semiconductor substrate 1, and a light emitting layer 4 which is located between the n-type nitride semiconductor layer 2 and the p-type nitride semiconductor layer 6. A resistivity of the nitride semiconductor substrate 1 is 0.5Ω cm or less. A side of the p-type nitride semiconductor layer 6 is down packaged, and a light is emitted from a secondary main front surface 1a which is a main front surface opposite to the primary main front surface of the nitride semiconductor substrate 1. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
