| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device capable of performing high speed read operation, and a control method of the nonvolatile semiconductor memory device.SOLUTION: The nonvolatile semiconductor memory device comprises: a memory cell array configuring a block by arranging a first memory cell MC and a second memory cell MC that include a charge storage layer and a control gate and are capable of holding data, and memory strings MS each including a selection transistor ST; and a control section 15 that applies a first voltage (Vcgr) to the first memory cell, applies a second voltage (Vread) to the second memory cell, and applies a third voltage to the selection transistor to perform a first read operation, and that then switches the selection transistor to which the third voltage is applied among the plurality of memory strings while maintaining the second voltage, and that performs a second read operation. |
