| 摘要 |
A method for forming a bit line of a semiconductor device is provided to prevent the bit line from being misaligned using line-type plug. An oxide film(102) is formed on a semiconductor substrate(100). A nitride(104) with a line/space pattern is formed on the oxide film. A photosensitive film for defining a bit line contact hole pattern is formed on the resulting structure. The photosensitive film is used as an etching mask to etch the oxide film which is exposed through the nitride film, so that the bit line contact hole pattern is formed. A plug poly(110) is deposited on the whole surface of the resulting structure. A planarization process is performed to expose the nitride film. A bit line(112) connected to the plug poly is formed.
|
