SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A minute transistor is provided. A transistor with low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. A semiconductor device including the transistor is provided. A semiconductor device includes an oxide semiconductor, a first conductor, a second conductor, a third conductor, a first insulator, and a second insulator. The first conductor overlaps with the oxide semiconductor with the first insulator positioned therebetween. The second insulator has an opening and a side surface of the second insulator overlaps with a side surface of the first conductor in the opening with the first insulator positioned therebetween. Part of a surface of the second conductor and part of a surface of the third conductor are in contact with the first insulator in the opening. The oxide semiconductor overlaps with the second conductor and the third conductor.

主权项

1. A semiconductor device comprising:
a first conductor layer and a second conductor layer over an oxide semiconductor; a third insulator over the first conductor layer and the second conductor layer, the third insulator comprising an opening; a fourth insulator over the third insulator, the first conductor layer, the second conductor layer, and the oxide semiconductor; a fifth insulator over the fourth insulator; and a third conductor over the fifth insulator, wherein in the opening of the third insulator, a side surface of the third insulator overlaps with a side surface of the third conductor with the fourth insulator and the fifth insulator positioned therebetween, and wherein in the opening of the third insulator, part of top surfaces of the first conductor layer and the second conductor layer is in contact with the fourth insulator.