发明名称 |
LIGHT-EMITTING DIODE CHIP |
摘要 |
A light-emitting diode chip including a semiconductor device layer, a first electrode, a current-blocking layer, a current-spreading layer, and a second electrode is provided. The semiconductor device layer includes a first-type doped semiconductor layer, a second-type doped semiconductor layer, and a light-emitting layer located between the first-type and second-type doped semiconductor layers. The first electrode is electrically connected to the first-type doped semiconductor layer. The current-blocking layer is disposed on the second-type doped semiconductor layer, and the current-blocking layer includes a main body and an extension portion extended from the main body. The current-spreading layer covers the current-blocking layer. The second electrode is electrically connected to the second-type doped semiconductor layer via the current-spreading layer, wherein the second electrode includes a bonding pad and a finger portion extended from the bonding pad, the bonding pad is located above the main body, the finger portion is located above the extension portion, and a partial region of the finger portion does not overlap the extension portion. |
申请公布号 |
US2016247972(A1) |
申请公布日期 |
2016.08.25 |
申请号 |
US201615045263 |
申请日期 |
2016.02.17 |
申请人 |
Genesis Photonics Inc. |
发明人 |
Kuo Yu-Chen;Lai Teng-Hsien;Kang Kai-Shun;Lan Yan-Ting;Huang Jing-En |
分类号 |
H01L33/38;H01L33/06;H01L33/40;H01L33/14 |
主分类号 |
H01L33/38 |
代理机构 |
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代理人 |
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主权项 |
1. A light-emitting diode chip, comprising:
a semiconductor device layer comprising a first-type doped semiconductor layer, a light-emitting layer, and a second-type doped semiconductor layer, wherein the light-emitting layer is located between the first-type doped semiconductor layer and the second-type doped semiconductor layer; a first electrode electrically connected to the first-type doped semiconductor layer; a current-blocking layer disposed on the second-type doped semiconductor layer, and the current-blocking layer comprises a main body and an extension portion extended from the main body; a current-spreading layer disposed on the second-type doped semiconductor layer to cover the current-blocking layer; and a second electrode electrically connected to the second-type doped semiconductor layer via the current-spreading layer, wherein the second electrode comprises a bonding pad and a finger portion extended from the bonding pad, the bonding pad is located above the main body, the finger portion is located above the extension portion, and a partial region of the finger portion does not overlap the extension portion. |
地址 |
Tainan City TW |