| 发明名称 |
MEMORY SYSTEM AND METHOD FOR CONTROLLING NONVOLATILE MEMORY |
| 摘要 |
According to one embodiment, a nonvolatile memory system includes a memory including a first memory and a second memory, the first memory including memory strings, the memory strings including memory cell transistors connected in series; and a memory controller which compresses a failure string position information of the first memory, which stores the compressed failure string position information in the second memory, and which decompresses the compressed failure string position information stored in the second memory. |
| 申请公布号 |
US2016259576(A1) |
申请公布日期 |
2016.09.08 |
| 申请号 |
US201514847560 |
申请日期 |
2015.09.08 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
ASAMI Shohei;HARA Tokumasa;YAO Hiroshi;YOSHII Kenichiro;SUZUKI Riki;HIDA Toshikatsu;TORII Osamu |
| 分类号 |
G06F3/06 |
主分类号 |
G06F3/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A memory system comprising:
a nonvolatile memory including a first memory and a second memory, the first memory including memory strings, the memory strings including memory cell transistors connected in series; and a memory controller which compresses a failure string position information of the first memory, which stores the compressed failure string position information in the second memory, and which decompresses the compressed failure string position information stored in the second memory. |
| 地址 |
Minato-ku JP |
