Techniques to Reduce Memory Cell Refreshes for a Memory Device

摘要

Examples may include techniques to reduce memory cell refreshes for a memory device. These techniques include a control unit receiving a command to cause an internal refresh counter for the memory device to increment without causing one or more rows of an array of memory cells to be refreshed during an auto-refresh interval. In some examples, a memory controller has access to a refresh counter register at the memory device that may allow the memory controller to determine when to send the command that causes the internal refresh counter to increment without refreshing the one or more rows during the auto-refresh interval.

主权项

1. An apparatus comprising:
a control unit for a memory device to receive a counter increment command from a memory controller via a same command-code as receiving auto-refresh commands that refresh one or more rows of an array of memory cells arranged in one or more banks during an auto-refresh interval; a refresh counter capable of being incremented by the control unit based on the counter increment command causing one or more first rows of the array to be skipped during the auto-refresh interval; and a refresh counter register capable of storing a value that indicates a first count for the refresh counter following incrementing of the refresh counter, the first count to indicate remaining rows of the array of memory cells to be refreshed or skipped during the auto-refresh interval.