| 摘要 |
Disclosed are a semiconductor device and a semiconductor system, for controlling levels of a plurality of internal voltages through global codes. The semiconductor device includes: a target voltage generation section for generating first and second target voltages in response to a ceiling voltage and a bottom voltage inputted through a pad; a comparison signal generation section for comparing levels of the first and second target voltages with levels of first and second internal voltages to generate first and second comparison signals; a latch code generation section for latching global codes in response to the first and second comparison signals to output first and second latch codes; and a selection code generation section for generating first and second selection codes from the global codes or the first and second latch codes, to adjust the levels of the first and second internal voltages in response to a test-mode-enable mode signal. |
