Variable resistance memory device and method of manufacturing the same

摘要

A variable resistance memory device and a method of manufacturing the same are provided. The variable resistance memory device includes a multi-layered insulating layer including a plurality of holes formed on a semiconductor substrate, a lower electrode formed in a bottom of each of the holes, a first spacer formed on the lower electrode and a sidewall of each of the holes, a second spacer formed on an upper sidewall of the first spacer, a third spacer formed on a lower sidewall of the first spacer below the second spacer, a variable resistance part that is formed on the lower electrode has a height lower than a height of a top of each hole, and an upper electrode formed on the variable resistance part to be buried in each hole.

主权项

1. A method of manufacturing a variable resistance memory device, the method comprising:
forming a multi-layered insulating layer on a semiconductor substrate; forming a hole exposing a portion of an upper surface of the semiconductor substrate by etching the multi-layered insulating layer; forming a lower electrode in a bottom of the hole; forming a first spacer on the lower electrode and a sidewall of the hole; forming a second spacer on an upper sidewall of the first spacer; forming a third spacer on a lower sidewall of the first spacer; forming a variable resistance part in the hole to have a height lower than that of the hole; and forming an upper electrode on the variable resistance part to be buried in the hole.