LIGHT-EMITTING SEMICONDUCTOR HETEROSTRUCTURE

摘要

FIELD: semiconductor devices and structures. ^ SUBSTANCE: proposed light-emitting semiconductor heterostructure built around nitride solid solutions of third-group metals AlxInyGa1 - (x + y)N (0 <= x <=1, 0 <= y <=1) with p-n junction has series of epitaxial layers firming p and n regions. Active area is formed in one of these regions that has at least one quantum well and other region has current-limiting layer. Active area is disposed within p region and current limiting layer, in n region. ^ EFFECT: enhanced external quantum efficiency. ^ 3 cl, 2 dwg