BONDING WIRE FOR SEMICONDUCTOR DEVICE

摘要

Provided is a Cu bonding wire having a Pd coating layer on the surface thereof, the bonding wire being suitable for vehicle-mounted devices and having improved bonding reliability at ball joints in a high-temperature high-humidity environment. This bonding wire for semiconductor devices includes: a Cu alloy core material; and a Pd coating layer formed on the surface thereof. The bonding wire includes a total of from 0.1 to 100 ppm by mass of one or more types of elements among As, Te, Sn, Sb, Bi, and Se. Thus, the bonding life of ball joints in a high-temperature high-humidity environment is improved, and bonding reliability can be improved. When the Cu alloy core material further includes from 0.011 to 1.2 mass% of one or more of Ni, Zn, Rh, In, Ir, Pt, Ga, and Ge, ball joint reliability in a high-temperature environment of 170°C or higher can be improved. Further, when an alloy skin layer including Au and Pd is formed on the surface of the Pd coating layer, wedge bondability is improved.