| 摘要 |
A split-gate source side injection flash memory structure that utilizes the polysilicon spacers formed on the sidewalls of the control gate and the floating gate, and the difference in concentration and depth between the source region and the drain region. By applying suitable operating voltage to the polysilicon spacers above the respective source region and drain region, operation of the flash memory can be properly controlled. Because a source-side injection is obtained in this invention, hence a higher programming efficiency is achieved.
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