发明名称 SEMICONDUCTOR LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING SAME
摘要 There is provided a semiconductor light emitting diode and a method of manufacturing the same that enable voltage in the forward direction to be decreased while allowing light extraction efficiency to be improved. This semiconductor light emitting diode is formed by a substrate, a light emitting portion that is disposed on one main surface of the substrate, a first electrode that is disposed on the light emitting portion, a pad electrode that is disposed on the first electrode, concave portions that are formed on at least a portion of the one main surface of the substrate, and a conductive layer that is formed from a conductive material that is disposed in the concave portions and reflects light emitted from the light emitting portion.
申请公布号 KR20060095470(A) 申请公布日期 2006.08.31
申请号 KR20060017648 申请日期 2006.02.23
申请人 SANKEN ELECTRIC CO., LTD. 发明人 TAZIMA MIKIO;MOKU TETSUJI;SATO JUNJI;KAMII YASUHIRO;NIWA AREI
分类号 H01L33/06;H01L33/20;H01L33/32;H01L33/42 主分类号 H01L33/06
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