MAGNETIC SEMICONDUCTOR AND ITS PRODUCTION METHOD

摘要

PROBLEM TO BE SOLVED: To realize a membrane crystal having the following characteristics: the autonomous formation of a nanocrystal containing a magnetic element in a high concentration is controlled artificially in a semiconductor containing a magnetic element; and even when the average composition of the magnetic element in the crystal is 20% or less, the crystal becomes to be in a ferromagnetic or superparamagnetic status at room temperature or higher, causing hysteresis in a magnetization process. SOLUTION: The autonomous development of a nanocrystal containing a magnetic element in a high concentration is made to be artificially controllable by adjusting an attractive force interaction between ions by changing the valence of a magnetic element ion in the crystal by adding an n-type or p-type dopant to a semiconductor containing the magnetic element or by regulating the deviation from a stoichiometric ratio in the composition rate of constituting elements in a compound by the adjustment of a raw material supply quantity at the time of crystal growth in the case of a compound semiconductor. COPYRIGHT: (C)2008,JPO&INPIT