MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD OF ELECTRONIC EQUIPMENT

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of reducing a thermal load to a substrate and heat-treating the large-area substrate, and to provide a manufacturing method of a semiconductor device capable of reducing a contaminant and improving the characteristics of the semiconductor device. SOLUTION: A semiconductor film 102 is formed on the substrate 100, a first film 103 is formed on the semiconductor film, and then the semiconductor film is scanned with the flame of a gas burner 22 using mixed gas of hydrogen and oxygen as fuel via the first film, thus recrystallizing the semiconductor film. COPYRIGHT: (C)2008,JPO&INPIT