| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of realizing a phenomenon of a channel resistance without deteriorating characteristics of transistors even from 0.1μm generation, and to provide its manufacturing method. SOLUTION: After a gate electrode is formed, a semiconductor film has once selectively been formed in a source region and a drain region. An angleθmade between a side face 120 opposite to a gate electrode 103 of these source semiconductor layer and drain semiconductor layer 105, and a face 121 coming into contact with a semiconductor substrate 101 of the source semiconductor layer and drain semiconductor layer 105 is an acute angle. A recess part is formed on an upper face of the source semiconductor layer and drain semiconductor layer 105, and a source electrode and drain electrode 108 are embedded in this recess part, respectively.
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