| 摘要 |
PROBLEM TO BE SOLVED: To provide a capacitor substrate with resistance which is used in a high frequency amplifier in which a plurality of transistor cells are arranged in parallel, provided with an insolation resistor between capacitors and has a small signal phase shift, and a high frequency semiconductor device.SOLUTION: Capacitor substrates 50A, B with resistance comprise: substrates 51; a plurality of film-like surface electrodes a, b, c, d which are arranged in one row on one surface of the substrates and connected in one row by resistors 53a, 53b, 53c; film-like rear surface electrodes 56 which are arranged on the rear surface of the surface where the surface electrodes are arranged and occupy at least the rear regions of the surface electrodes; and connection patterns e which are arranged on the surface where the surface electrodes of the substrates are arranged and composed of film-like conductors connected to the surface electrodes located on the ends among the plurality of surface electrodes by resistors 55. At least a portion of the rear region of the region where the connection pattern is arranged is a non-electrode region where the rear surface electrode is not arranged.SELECTED DRAWING: Figure 6 |
