| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a silicon single crystal-producing method which enables production of a grown crystal having a resistivity distribution equivalent to that of the single crystal product obtained by a conventional FZ method even when a silicon crystal having been pulled by a CZ method is used. <P>SOLUTION: In the silicon single crystal-producing method using an FZ method, a P-type or N-type silicon crystal pulled by a CZ method is used as a raw material 6, and while supplying an impurity having the same conductivity type as that of the raw material 6 by a gas doping apparatus 4, the material is recrystallized by an induction heating coil 3 to prepare a single crystal product 8. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
