| 主权项 |
1. A silicon carbide semiconductor device comprising:
a silicon carbide layer having a first main surface and a second main surface opposite to the first main surface, the silicon carbide layer including a first region having n type conductivity, the first region defining the first main surface of the silicon carbide layer, a second region provided in the first region, the second region having p type conductivity, and a third region provided in the second region, the third region having the p type conductivity and having an impurity concentration higher than an impurity concentration of the second region; a gate insulating film provided on the second region of the silicon carbide layer; a gate electrode provided on the gate insulating film; an interlayer insulating film provided to cover the gate insulating film and the gate electrode, the interlayer insulating film being provided with a first contact hole to expose the gate electrode; and a gate pad provided on the interlayer insulating film, the gate pad being electrically connected to the gate electrode through the first contact hole, the gate electrode including a first comb-tooth shaped electrode portion extending from outside of the gate pad toward a circumferential edge portion of the gate pad and overlapping with the gate pad at the circumferential edge portion of the gate pad when viewed in a plan view, the third region including a central portion overlapping with the gate pad when viewed in the plan view, and a first peripheral portion extending from the central portion toward the outside of the gate pad, the first peripheral portion being provided to face the first comb-tooth shaped electrode portion of the gate electrode with a space interposed therebetween. |
