| 摘要 |
PROBLEM TO BE SOLVED: To obtain a graphene film with a wide area having satisfactory crystallinity on an optional substrate at a low temperature by a simple method.SOLUTION: Provided is a method for producing a graphene film by the plasma decomposition of a carbon source. A raw material gas of a compound at least comprising carbon and hydrogen is made to flow to the surface of a substrate, while irradiating the surface of the substrate with a laser, plasma of the raw material gas is generated by microwave excitation, and a graphene film is produced on the substrate. In this way, the graphene film with a wide area having satisfactory crystallinity can be obtained. |
