发明名称 |
RELIABLE MICROSTRIP ROUTING FOR ELECTRONICS COMPONENTS |
摘要 |
Reliable microstrip routing arrangements for electronics components are described. In an example, a semiconductor apparatus includes a semiconductor die having a surface with an integrated circuit thereon coupled to contact pads of an uppermost metallization layer of a semiconductor package substrate by a plurality of conductive contacts. A plurality of discrete metal planes is disposed at the uppermost metallization layer of the semiconductor package substrate, each metal plane located, from a plan view perspective, at a corner of a perimeter of the semiconductor die. Microstrip routing is disposed at the uppermost metallization layer of the semiconductor package substrate, from the plan view perspective, outside of the perimeter of the semiconductor die. |
申请公布号 |
US2016300796(A1) |
申请公布日期 |
2016.10.13 |
申请号 |
US201615183645 |
申请日期 |
2016.06.15 |
申请人 |
Karhade Omkar G.;Altunyurt Nevin;Lee Kyu Oh;Bharath Krishna |
发明人 |
Karhade Omkar G.;Altunyurt Nevin;Lee Kyu Oh;Bharath Krishna |
分类号 |
H01L23/538;H01L25/065;H01L23/31;H01L23/00;H01L21/56;H01L23/498 |
主分类号 |
H01L23/538 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor package, comprising:
first and second adjacent semiconductor dies; a silicon interposer structure disposed below and electrically coupling the first and second semiconductor dies; an organic package substrate disposed below and electrically coupled to the silicon interposer structure by a plurality of conductive contacts, the organic package substrate comprising a plurality of routing layers therein; a plurality of discrete metal planes disposed at an uppermost metallization layer of the plurality of routing layers of the organic package substrate, each metal plane located, from a plan view perspective, at a corner of a perimeter of the silicon interposer structure; and microstrip routing disposed at the uppermost metallization layer of the plurality of routing layers of the organic package substrate, from the plan view perspective, outside of the perimeter of the silicon interposer structure. |
地址 |
Chandler AZ US |