| 摘要 |
The present invention is a photoelectric conversion element provided with at least a light-permeable support (11, 12, 41, 42), a conductive layer (13, 43), a photoelectric conversion layer (15, 45), a catalyst layer (16, 46), and a counter electrode layer (17, 47) in that order. The photoelectric conversion element is characterized by the photoelectric conversion layer (15, 45) containing a porous semiconductor layer (151), which contains a semiconductor material, and a photosensitizing element that is adsorbed on the porous semiconductor layer (151). The photoelectric conversion element is further characterized by having core-shell type particles formed within the porous semiconductor layer (151) or on a layer on the catalyst layer (16, 46) side of the porous semiconductor layer (151) from core particles that are formed from semiconductor material and a shell part formed from an insulating oxide that covers at least part of the surfaces of the core particles. |
