Semiconductor light-emitting device and method of forming electrode

摘要

A semiconductor light-emitting device having an electrode that can be manufactured by a simple method and is unlikely to deteriorate, and a method for forming the electrode are provided. The semiconductor light-emitting device according to the present invention has a semiconductor layered structure having a light-emitting layer that emits light by supplying electric power and an electrode formed on the semiconductor layered structure. The electrode has a reflection layer that reflects light exiting from the light-emitting layer, a barrier layer formed on the upper side and side surface of the reflection layer, and a pad layer formed only on the top surface of the barrier layer.

主权项

1. A semiconductor light-emitting device comprising:
a semiconductor layered structure having a light-emitting layer that emits light upon supply of electric power, an electrode that supplies electric power to the light-emitting layer, and a passivation layer formed so as to cover at least a part of the electrode, wherein the electrode comprises:
a reflection layer that reflects light exiting from the light-emitting layer and is made of Al,a pad layer made of Au, anda barrier layer positioned between the reflection layer and the pad layer, the barrier layer is formed on an upper side and a side surface of the reflection layer, the pad layer is formed on a whole of an upper surface of the barrier layer, and the passivation layer is in contact with the barrier layer and the pad layer, and wherein a side surface of the pad layer, a side surface of the barrier layer and a side surface of the reflection layer are inclined.