| 摘要 |
According to an aspect of the present inventive concept there is provided a process for forming an aperture in a pattern layer, comprising:
forming a mask above the pattern layer using a lithography process, wherein the mask includes at least one mask portion,
reducing lateral dimensions of each of said at least one mask portions in a trimming process to form a reduced mask,
depositing by atomic layer deposition, ALD, a metal oxide film selectively on exposed surface portions of the pattern layer,
removing the reduced mask, and
forming at least one aperture in the pattern layer by etching at least one exposed surface portion of the pattern layer while using the metal oxide film as an etch mask. |
