| 发明名称 | Resistive devices and methods of operation thereof | ||
| 摘要 | A method of operating a resistive switching device includes applying a program stress to a two terminal resistive memory unit. The program stress is applied at a program voltage configured to change a state of the memory unit from a first state to a second state. The method further includes applying a verification/stabilization stress to the two terminal resistive memory unit. The verification/stabilization stress is applied at a verification/stabilization voltage. An erase stress is applied to the two terminal resistive memory unit. The erase stress is applied at an erase voltage configured to change a state of the memory unit from the second state to the first state. The verification/stabilization voltage is between the program voltage and the erase voltage. | ||
| 申请公布号 | US9001553(B1) | 申请公布日期 | 2015.04.07 |
| 申请号 | US201213670385 | 申请日期 | 2012.11.06 |
| 申请人 | Adesto Technologies Corporation | 发明人 | Kamalanathan Deepak |
| 分类号 | G11C11/00 | 主分类号 | G11C11/00 |
| 代理机构 | Slater & Matsil, L.L.P. | 代理人 | Slater & Matsil, L.L.P. |
| 主权项 | 1. A method of operating a resistive switching device, the method comprising: applying a program stress to a two terminal resistive memory unit, the program stress being applied at a program voltage configured to change a state of the memory unit from a first state to a second state; applying a verification/stabilization stress to the two terminal resistive memory unit, the verification/stabilization stress being applied at a verification/stabilization voltage; and applying an erase stress to the two terminal resistive memory unit, the erase stress being applied at an erase voltage configured to change a state of the memory unit from the second state to the first state, wherein the verification/stabilization voltage is between the program voltage and the erase voltage. | ||
| 地址 | Sunnyvale CA US | ||