发明名称 MODULE-LEVEL PROCESSING OF SILICON PHOTOVOLTAIC CELLS
摘要 PROBLEM TO BE SOLVED: To provide a method capable of obtaining good surface passivation quality of a rear side of a thin solar cell.SOLUTION: A method includes: a bonding step of bonding at least one crystalline silicon photovoltaic substrate 12 to a carrier 10 by means of an adhesive layer 11, thereby leaving part of the adhesive layer 11 uncovered; a step of, after the bonding step, exposing the uncovered part 13 of the adhesive layer 11 and the at least one crystalline silicon photovoltaic substrate 12 to plasma; a step of removing a surface portion of the at least one crystalline photovoltaic substrate 12; and a step of depositing an intrinsic a-Si:H passivation layer 14 on the at least one photovoltaic substrate 12. The method may further include: a step of annealing the adhesive 11 before bonding the at least one photovoltaic substrate 12 to the carrier 10; and a step of outgassing the adhesive 11 after bonding the at least one photovoltaic substrate 12 to the carrier 10.
申请公布号 JP2015082659(A) 申请公布日期 2015.04.27
申请号 JP20140177442 申请日期 2014.09.01
申请人 IMEC VZW;KATHOLIEKE UNIV LEUVEN 发明人 STEPHANO GRANATA;TWAN BEARDA
分类号 H01L31/0216;H01L31/048;H01L31/18 主分类号 H01L31/0216
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