VARIABLE RESISTANCE DEVICES AND METHODS OF MANUFACTURING THE SAME

摘要

The purpose of the present invention is to provide a variable resistance memory device having an excellent characteristic. The variable resistance memory device comprises: a plurality of first conductive patterns individually extended in a first direction; a plurality of second conductive patterns arranged in an upper part of the first conductive patterns, and individually extended in a second direction perpendicular to the first direction; and a pattern structure arranged on respective positions in which the first conductive patterns intersect with the second conductive patterns, and including a lower cell structure including a selection device and a variable resistance device. The second conductive pattern of the first dummy pattern structure arranged on the boundary of the pattern structure in the first direction protrudes more in the first direction than the lower cell structure connected to the first dummy pattern structure. The first conductive pattern of the second dummy pattern structure arranged on the boundary of the pattern structure in the second direction protrudes more in the second direction than the lower cell structure connected to the second dummy pattern structure. Errors generated by etching residue in the variable resistance memory device can be reduced.