| 发明名称 |
HIGHLY SELECTIVE DEPOSITION OF AMORPHOUS CARBON AS A METAL DIFFUSION BARRIER LAYER |
| 摘要 |
A method for providing a metal diffusion barrier layer comprising providing a substrate including a metal layer; depositing a dielectric layer on the metal layer; defining a feature in the dielectric layer, wherein the feature includes side walls defined by the dielectric layer and a bottom surface defined by the metal layer; selectively depositing a metal diffusion barrier layer on the side walls of the feature and not depositing the metal diffusion barrier layer on the bottom surface of the feature, wherein the metal diffusion barrier layer includes amorphous carbon; and depositing metal in the feature. |
| 申请公布号 |
US2016329213(A1) |
申请公布日期 |
2016.11.10 |
| 申请号 |
US201615095258 |
申请日期 |
2016.04.11 |
| 申请人 |
Lam Research Corporation |
发明人 |
Tang Wei;Park Jason Daejin;Van Cleemput Patrick A.;Dordi Yezdi |
| 分类号 |
H01L21/285;H01L21/3213;H01L21/768 |
主分类号 |
H01L21/285 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A method for providing a metal diffusion barrier layer comprising:
providing a substrate including a metal layer; depositing a dielectric layer on the metal layer; defining a feature in the dielectric layer, wherein the feature includes side walls defined by the dielectric layer and a bottom surface defined by the metal layer; selectively depositing a metal diffusion barrier layer on the side walls of the feature, wherein the metal diffusion barrier layer includes amorphous carbon; and depositing metal in the feature. |
| 地址 |
Fremont CA US |
