FARADAY APPARATUS OF ION IMPLANTER TO AVOID GENERATION OF PROCESS DEFECT

摘要

PURPOSE: A faraday apparatus of an ion implanter is provided to avoid generation of a process defect by detecting a short circuit between a faraday cup and a shield in an ion implantation process. CONSTITUTION: A faraday cup(24) measures the dose quantity caused by ion implantation, installed in the rear part of a disk on which a wafer is mounted. A shield(33) is insulated from the faraday cup. A current meter(25) measures the dose quantity injected to the faraday cup by using a beam current. An insulation measuring unit(36) measures the short circuit between the faraday cup and the shield. A controller stops the progression of a process when a current value is detected from the insulation measuring unit.