| 摘要 |
Even if it is the semiconductor device provided with the wiring on an isolation insulating film, the sidewall formed on the side surface of this wiring, and the shared contact which connects the wiring and the impurity diffusion on an active region, the semiconductor device which can suppress the generation of the leakage current from shared contact to a semiconductor substrate, and its manufacturing method are offered. The semiconductor device concerning the present invention is provided with an isolation insulating film selectively formed on the main front surface of a semiconductor substrate, an active region specified by an isolation insulating film on the main front surface of a semiconductor substrate, a recess which reaches an active region on the isolation insulating film, the first insulating film formed so that a recess might be covered, the second insulating film which is formed on a first insulating film, is filled up with a recess, and differs in a material from the first insulating film, an impurity diffused layer formed on the main front surface of the active region of the position which adjoins the recess, and an electric conduction film formed on the impurity diffused layer.
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