| 摘要 |
<P>PROBLEM TO BE SOLVED: To surely eliminate an influence that a polishing cloth exerts on the deterioration of a property of a semiconductor device (pressure-resistant property of a gate oxide film), and also to surely eliminate an influence that a new polishing cloth exerts on the deterioration of a property of the semiconductor device (pressure-resistant property of the gate oxide film). <P>SOLUTION: A copper concentration in the polishing cloth is managed throughout processes of manufacturing, packaging, transportation, and storage, so that a new polishing cloth has a copper concentration of ≤1 ppm (preferably, of 0.01 ppm) at the beginning of polishing. The polishing is implemented by using the new polishing cloth with its copper concentration kept at ≤1 ppm (preferably, at 0.01 ppm). Immediately after replacement with the new polishing cloth in a polishing apparatus, a dummy run step is implemented, and this continues until the copper concentration in the polishing cloth is lowered to a reference level, that is, to ≤1 ppm (preferably, to 0.01 ppm). After the dummy run step, the throwaway dummy wafer is replaced with a silicon wafer to be a product, and then the polishing is implemented. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
