发明名称 |
SEMICONDUCTOR MEMORY DEVICE |
摘要 |
A semiconductor memory device includes a first memory block having a first memory cell transistor and a first select transistor, a second memory block having a second memory cell transistor and a second select transistor, a first select gate line that is electrically connected to a gate of the first select transistor, and a second select gate line that is electrically connected to a gate of the second select transistor. During writing of data to a memory cell transistor in the first block, a first voltage is applied to the first select gate line during a first time period, a second voltage is applied to the second select gate line during a second time period after the first time period, and a third voltage lower than the first voltage is applied to the first select gate line during a third time period after the second time period. |
申请公布号 |
US2016247573(A1) |
申请公布日期 |
2016.08.25 |
申请号 |
US201615051546 |
申请日期 |
2016.02.23 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
MAEJIMA Hiroshi |
分类号 |
G11C16/10;G11C16/26;G11C16/04 |
主分类号 |
G11C16/10 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor memory device comprising:
a first block including a first memory string that includes a first memory cell transistor and a first select transistor; a second block including a second memory string that includes a second memory cell transistor and a second select transistor; a first select gate line that is electrically connected to a gate of the first select transistor; and a second select gate line that is electrically connected to a gate of the second select transistor, wherein during writing of data to a memory cell transistor in the first block, a first voltage is applied to the first select gate line during a first time period, a second voltage is applied to the second select gate line during a second time period after the first time period, and a third voltage lower than the first voltage is applied to the first select gate line during a third time period after the second time period. |
地址 |
Tokyo JP |