POWER AND AREA EFFICIENT METHOD FOR GENERATING A BIAS REFERENCE

摘要

In one embodiment, a method for generating a reference comprises generating a current that is approximately temperature independent over a temperature range based on an emitter-base voltage of a first bipolar junction transistor (BJT), and generating a first proportional to absolute temperature (PTAT) current based on the emitter-base voltage of the first BJT.

主权项

1. A combined band-gap and proportional to absolute temperature (PTAT) circuit, comprising:
a first bipolar junction transistor (BJT); a feedback circuit configured to force a first voltage at a first node to be approximately equal to an emitter-base voltage of the first BJT, and to force a second voltage at a second node to be approximately equal to the emitter-base voltage of the first BJT; a first circuit coupled to the first node, wherein the first circuit is configured to generate a current that is approximately independent of temperature over a temperature range; a second circuit coupled to the second node, wherein the second circuit is configured to generate a PTAT current.