SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

Disclosed is a semiconductor device (100) comprising a semiconductor substrate (10) of a first conductivity type which is composed of silicon carbide, a silicon carbide epitaxial layer (20) of the first conductivity type formed on a major surface (10a) of the semiconductor substrate (10), a well region (22) of a second conductivity type formed in a part of the silicon carbide epitaxial layer (20), and a source region (24) of the first conductivity type formed in a part of the well region (22). A channel epitaxial layer (30) composed of silicon carbide is formed on the silicon carbide epitaxial layer (20), the well region (22) and the source region (24), and a part of the channel epitaxial layer (30) located on the well region (22) functions as a channel region (40). A dopant of the first conductivity type is implanted into portions (33, 35) of the channel epitaxial layer (30), namely portions other than the channel region (40).