| 摘要 |
The present invention relates to a method for recycling a semiconductor process component. The method for recycling a semiconductor process component includes the following steps: preparing a semiconductor process component including a TaC coating layer and a SiC deposition layer formed on the TaC coating layer; and heat-treating the semiconductor process component at 1700 to 2700°C under a condition of at least one gas selected from a group comprising a gas including hydrogen, a gas including chlorine, and an inert gas or under a vacuum condition. According to an embodiment of the present invention, the method does not require an aftertreatment process such as wet washing, thereby reducing a process time. |
