SEMICONDUCTOR LASER AND OPTICAL COMMUNICATION DEVICE

摘要

PROBLEM TO BE SOLVED: To obtain a semiconductor laser in which high speed and high reliability are achieved simultaneously. SOLUTION: The semiconductor laser comprises a semiconductor substrate 10, a lower clad layer 2 formed on the semiconductor substrate 10, an active layer 3 formed on the upper side of the lower clad layer 2, an upper clad layer 6 formed on the upper side of the active layer 3 as a stripe-like ridge extending along the axis of a resonator, a current block layer 9 formed on the opposite sides of the stripe-like ridge in order to inject a current selectively into the stripe-like ridge region, a semiconductor layer 10 formed above the upper clad layer 6 and the current block layer 9 in contact with an electrode and having a conductivity type identical to that of the upper clad layer, a dielectric insulation layer 20 formed on the semiconductor layer 10 excepting at least the upper region of the stripe-like ridge, and an electrode 21 formed on the entire surface of the dielectric insulation layer 20 or a partial region thereof and the semiconductor layer 10 wherein the impurity concentration of the semiconductor layer 10 is set at 1×1018/cm3or less. COPYRIGHT: (C)2007,JPO&INPIT