| 摘要 |
PROBLEM TO BE SOLVED: To provide a transistor with high field-effect mobility, a transistor having stable electrical characteristics, a transistor having a low off-state current, or a semiconductor device including the transistor.SOLUTION: A semiconductor device includes a first conductor, a first insulator over the first conductor, a first semiconductor over the first insulator, a second semiconductor over the first semiconductor, a second conductor and a third conductor over the second semiconductor, a third semiconductor over the second semiconductor, the second conductor, and the third conductor, a second insulator over the third semiconductor, and a fourth conductor over the second insulator. In a method for manufacturing the semiconductor device, formation of each layer is performed without exposure to the air. |
