| 摘要 |
Provided is a novel Cu wiring film having improved adhesiveness to a substrate. The Cu wiring film has a Cu oxide formed on a glass substrate, and has a strength ratio of Cu(111)/CuO(111) within a range of 0.8-2.5, wherein, Cu(111) is an X-ray diffraction peak strength of a (111) plane of a Cu main crystal plane, and CuO(111) is an X-ray diffraction peak strength of a (111) plane of a CuO main crystal plane. The Cu wiring film preferably has a film thickness of 200-500nm. |
