| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for an MOSFET which has an LDD structure and also has a metal silicide layer formed in a source/drain region by self-matching, and in which method the silicide layer on the source/drain region is not in contact with an LDD layer. SOLUTION: After a silicon oxide film 7 for protection is formed on a silicon substrate 1 after the source/drain region 6 is formed, the silicon oxide film 7 is removed from above a part forming a titanium film 8 to form a protection film 72. The protection film 72 is formed even on a gate electrode 3, a side wall 51, and the part 61 of the source/drain region 6 on the side of the LDD layer 4. Then the titanium film 8 is formed on the silicon substrate 1 across the protection film 72, and then heat-treated as specified to subject the silicon substrate 1 and titanium film 8 to reaction, thereby forming a silicide layer 9 on the source/drain region 6. COPYRIGHT: (C)2007,JPO&INPIT
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