发明名称 |
SILICON-ON-SAPPHIRE DEVICE WITH MINIMAL THERMAL STRAIN PRELOAD AND ENHANCED STABILITY AT HIGH TEMPERATURE |
摘要 |
A silicon-on-sapphire chip with minimal thermal strain preload is provided. The chip includes a sapphire substrate having a first-sapphire surface and an opposing second-sapphire surface; and a silicon layer overlaying the first-sapphire surface. The silicon layer is formed by: creating a plurality of buried cavities in a plane within tens of microns from a first-silicon surface of a silicon wafer; laser fusing the first-silicon surface to the first-sapphire surface at room temperature to attach the silicon wafer to a sapphire wafer; and cleaving the silicon wafer along the plane including the plurality of buried cavities. A silicon-wafer layer is formed from the silicon material between the first-silicon surface and the plane of the plurality of buried cavities. The silicon-wafer layer and the sapphire wafer form a silicon-on-sapphire wafer. The silicon-on-sapphire chip is formed by dicing the silicon-on-sapphire wafer. |
申请公布号 |
EP3093880(A1) |
申请公布日期 |
2016.11.16 |
申请号 |
EP20160163058 |
申请日期 |
2016.03.30 |
申请人 |
HONEYWELL INTERNATIONAL INC. |
发明人 |
BROWN, GREGORY C. |
分类号 |
H01L21/762;B81B3/00 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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