发明名称 SEMICONDUCTOR DEVICE, MANUFACTURING METHOD OF THE SAME, AND MOBILE PHONE
摘要 A technique capable of maintaining the filter characteristics of a transmitting filter and a receiving filter by reducing the influences of heat from the power amplifier given to the transmitting filter and the receiving filter as small as possible in the case where the transmitting filter and the receiving filter are formed on the same semiconductor substrate together with the power amplifier in a mobile communication equipment typified by a mobile phone is provided. A high heat conductivity film HCF is provided on a passivation film PAS over the entire area of a semiconductor substrate 1S including an area AR1 on which an LDMOSFET is formed and an area AR2 on which a thin-film piezoelectric bulk wave resonator BAW is formed. The heat mainly generated in the LDMOSFET is efficiently dissipated in all directions by the high heat conductivity film HCF formed on the surface of the semiconductor substrate 1S.
申请公布号 US2016164478(A1) 申请公布日期 2016.06.09
申请号 US201615041368 申请日期 2016.02.11
申请人 RENESAS ELECTRONICS CORPORATION 发明人 ASAI Kengo;ISOBE Atsushi
分类号 H03F3/19;H03F3/21;H01L23/373 主分类号 H03F3/19
代理机构 代理人
主权项 1. A semiconductor device comprising: (a) a semiconductor substrate; (b) a power amplifier which amplifies power of a transmission signal, outputs the transmission signal to an antenna and is formed on a first area of the semiconductor substrate; (c) a transmission filter connected between the power amplifier and the antenna; (d) an insulating film formed on the semiconductor substrate so as to cover the power amplifier; (e) a high heat conductivity film which is formed on the insulating film and has a heat conductivity higher than that of the insulating film; and wherein the transmission filter includes a thin-film piezoelectric bulk wave resonator which is formed on the insulating film formed on a second area of the semiconductor substrate, with the high heat conductivity film interposed therebetween, wherein the semiconductor substrate is provided with a third area between the first area and the second area, and concave and convex shapes are formed on a surface of the insulating film formed on the third area of the semiconductor substrate.
地址 Tokyo JP