| 摘要 |
<p>The invention relates to a radiofrequency power limiter (300) comprising at least one transistor (T1, T2, T3, T4), a drain (D) of the or each transistor being directly connected to a mesh connecting an inlet (E) and an outlet (S) of the limiter, a source (S) of the or each transistor being connected to a common reference potential, and a gate (G) of the or each transistor being connected to a common command potential (Voff), the or each transistor being non-polarised between the drain thereof and the source thereof during the operation of the limiter.</p> |
