CONTACT STRUCTURES AND METHODS OF FORMING THE SAME

摘要

Embodiments of the present disclosure include contact structures and methods for forming the same. An embodiment relates to a method for forming a semiconductor device. The method comprises the following steps of: forming a contact region on a substrate; forming a dielectric layer on the contact region and the substrate; and forming an opening which penetrates the dielectric layer to expose a portion of the contact region. The method further comprises the following steps of: forming a metal-silicide layer on an exposed portion of the contact region along sidewalls of the opening; and filling the opening with a conductive material to form a conductive plug in the dielectric layer wherein the conductive plug is electrically coupled to the contact region.