METHODS OF FORMING SEMICONDUCTOR DEVICE STRUCTURES INCLUDING METAL OXIDE STRUCTURES

摘要

Methods of forming metal oxide structures and methods of forming metal oxide patterns on a substrate using a block copolymer system formulated for self-assembly. A block copolymer at least within a trench in the substrate and including at least one soluble block and at least one insoluble block may be annealed to form a self-assembled pattern including a plurality of repeating units of the at least one soluble block laterally aligned with the trench and positioned within a matrix of the at least one insoluble block. The self-assembled pattern may be exposed to a metal oxide precursor that impregnates the at least one soluble block. The metal oxide precursor may be oxidized to form a metal oxide. The self-assembled pattern may be removed to form a pattern of metal oxide lines on the substrate surface. Semiconductor device structures are also described.

主权项

1. A method of foaming a semiconductor device structure, comprising:
forming a block copolymer material comprising a hydrophilic polymer and a hydrophobic polymer within at least one trench in a material overlying a substrate; annealing the block copolymer material to form domains of the hydrophilic polymer within a matrix of the hydrophobic polymer; contacting the domains of the hydrophilic polymer with a swelling agent comprising a metal oxide precursor to form metal oxide precursor-impregnated domains of the hydrophilic polymer; and exposing the metal oxide precursor-impregnated domains of the hydrophilic polymer to an oxidizing agent to form metal oxide structures comprising the hydrophilic polymer and a metal oxide within the matrix of the hydrophobic polymer.