A semiconductor structure is provided that includes a semiconductor fin portion (14P) having an end wall (15W) and extending upward from a substrate (10). A gate structure (16) straddles a portion of the semiconductor fin portion (14P). A first set of gate spacers (24P/50P) is located on opposing sidewall surfaces of the gate structure (16L/16R); and a second set of gate spacers (32P) is located on sidewalls of the first set of gate spacers (24P/50P). One gate spacer of the second set of spacers (32P) has a lower portion that directly contacts the end wall (15W) of the semiconductor fin portion (14P).
申请公布号
WO2016189405(A1)
申请公布日期
2016.12.01
申请号
WO2016IB52590
申请日期
2016.05.06
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION;IBM UNITED KINGDOM LIMITED;IBM (CHINA) INVESTMENT COMPANY LIMITED
发明人
KANAKASABAPATHY, Sivananda;LIE, Fee Li;KARVE, Gauri;SEO, Soon-Cheon;SIEG, Stuart;HE, Hong;LIU, Derrick;DORIS, Bruce