Semiconductor Device Having Switchable Regions with Different Transconductances

摘要

A semiconductor device includes a semiconductor substrate having an outer rim, a plurality of switchable cells defining an active area, and an edge termination region arranged between the switchable cells and the outer rim. Each of the switchable cells includes a gate electrode structure. The semiconductor device further includes a gate metallization in contact with the gate electrode structure. The active area includes at least a first switchable region having a first specific transconductance and at least a second switchable region having a second specific transconductance which is different from the first specific transconductance. The second switchable region is arranged between the gate metallization and the first switchable region. A ratio of the area of the second switchable region to the total area of the switchable regions is in a range from 5% to 50%.

主权项

1. A semiconductor device, comprising:
a semiconductor substrate comprising an outer rim, a plurality of switchable cells defining an active area, and an edge termination region arranged between the switchable cells and the outer rim, wherein each of the switchable cells comprises a gate electrode structure; and a gate metallization in contact with the gate electrode structure, wherein the active area comprises at least a first switchable region having a first specific transconductance and at least a second switchable region having a second specific transconductance which is different from the first specific transconductance, wherein the second switchable region is arranged between the gate metallization and the first switchable region, wherein a ratio of the area of the second switchable region to the total area of the switchable regions is in a range from 5% to 50%.